Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications
نویسندگان
چکیده
Abstract The physical properties of carbon materials can be altered by doping. For instance, the electronic graphene modulated controlling substitutional doping lattice with N. In addition, C–N bonding configurations three ring types are recognized: pyridinic-N, pyrrolic-N, and graphitic-N. Controlling type relative density various N is an important objective that requires extremely high level precision when atomic constructed. This control accomplished only via bottom-up methods, such as chemical vapor deposition (CVD). number reports on N-doped (NDG) grown CVD has increased over past decade, but a reliable wafer-scale production strategy realize desired atomic-precision growth NDG still lacking. To identify most promising strategies analyze consistency results published in literature, we review characterization two-dimensional two popular applications films: field-effect transistors energy storage devices.
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Nitrogen-doped graphene by microwave plasma chemical vapor deposition
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ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2022
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-022-00287-8